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| GP1S21/GP1S22 GP1S21/GP1S22 s Features 1. Ultra-compact 2. PWB mounting type package 3. High sensing accuracy Slit width ; GP1S21 : 0.8mm GP1S22 : 0.3mm Subminiature Photointerrupter s Outline Dimensions ( Unit : mm ) Internal connection diagram 2 3 ( ) 4.2 ( Light axis ) 1.5 1.2 1 1 Anode 2 Cathode 4 3 Emitter 4 Collector s Applications 1. Cameras 2. Floppy disk drives 4.2 5 Slit width (C0.8) 3.9 2.8 (1.0) (C0.3) 4 - 0.15 g3.1 1 4 4.0MIN. Rest of gate (2) 4 - 0.5 g2.5 5.2 1.5+ - 0.1 0 Hole 5 Slit width GP1S21 : 0.8mm GP1S22 : 0.3mm 2 3 * Tolerance: 0.2mm * Burr's dimensions : 0.15MAX. * Rest of gate : 0.3MAX. * ( ) : Reference dimensions * The dimensions indicated by g refer to those measured from the lead base. s Absolute Maximum Ratings Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol IF VR P VCEO VECO IC PC Ptot Topr Tstg Tsol Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260 ( Ta = 25C ) Unit mA V mW V V mA mW mW C C C Input Output Soldering area *1 For 5 seconds " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." 1mm or more GP1S21/GP1S22 s Electro-optical Characteristics Input Output Parameter Forward voltage Reverse current Collector dark current Collector Current Transfer characteristics Collector-emitter saturation voltage ( Ta = 25C ) Symbol VF IR ICEO Conditions IF = 20mA VR = 3V VCE = 20V VCE = 5V, I F = 1.5mA VCE = 5V, I F = 5mA IF = 3mA, I C = 27 A IF = 10mA, I C = 50 A IC = 0.1mA, V CE = 5V, R L = 1k MIN. 27 100 TYP. 1.2 50 50 MAX. 1.4 10 1 x 10 -7 260 1300 0.4 0.4 150 150 Unit V A A A A V V s s Response time GP1S21 GP1S22 GP1S21 GP1S22 Rise time Fall time Ic V CE(sat) tr tf Fig. 1 Forward Current vs. Ambient Temperature 60 Fig. 2 Power Dissipation vs. Ambient Temperature 120 P tot 50 Power dissipation P ( mW ) Forward current I F ( mA ) 100 40 80 P, P c 30 60 20 40 10 0 - 25 20 0 - 25 0 25 50 75 85 100 0 25 50 75 85 100 Ambient temperature T a ( C ) Ambient temperature T a ( C ) Fig. 3 Forward Current vs. Forward Voltage 500 200 100 Forward current I F ( mA ) 50 20 10 5 2 1 0 0.5 1 1.5 2 2.5 3 3.5 Forward voltage V F ( V ) T a = 75C 50C 25C 0C - 25C Fig. 4 Collector Current vs. Forward Current 2.0 1.8 1.6 Collector current I C ( mA ) 1.4 1.2 GP1S21 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10 Forward current I F ( mA ) GP1S22 V CE = 5V T a = 25C GP1S21/GP1S22 Fig. 5-a Collector Current vs. Collector-emitter (GP1S21 ) Voltage 11 10 9 ( mA ) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 10mA 1.5mA 7 8 9 10 20mA I F = 50mA 40mA 30mA ( mA ) P C ( MAX. ) Fig. 5-b Collector Current vs. Collector-emitter (GP1S22 ) Voltage 11 10 9 8 7 6 5 4 20mA 3 2 1 0 0 1 2 3 4 5 6 10mA 5mA 7 8 9 10 30mA I F = 50mA 40mA P C ( MAX. ) C Collector current I Collector-emitter voltage V CE ( V ) Collector current I C Collector-emitter voltage V CE ( V ) Fig. 6 Collector Current vs. Ambient Temperature 0.6 GP1S22 V CE = 5V I F = 1.5mA (GP1S21 ) I F = 5mA ( GP1S22 ) Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.16 0.14 Collector-emitter saturation voltage V CE(sat) (V) 0.12 0.10 GP1S22 0.08 0.06 0.04 0.02 IF = IF = I C= I C= 3mA (GP1S21 ) 10mA (GP1S22 ) 27 A (GP1S21 ) 50 A (GP1S22 ) GP1S21 0.5 ( mA ) Collector current I C 0.4 0.3 GP1S21 0.2 0.1 0 -25 0 25 50 75 100 0 -25 0 25 50 75 100 Ambient temperature T a (C) Ambient temperature T a (C) Fig. 8 Response Time vs. Load Resistance 500 200 100 Response time ( s ) 50 20 10 5 2 1 ts V CE= 5V I C= 100 A T a = 25C VCC tf tr td Input RD RL Output Input Output Test Circuit for Response Time 10% 90% td ts tr tf 0.5 0.3 0.01 0.1 0.2 0.5 1 2 5 10 20 Load resistance R L ( k ) 50 100 GP1S21/GP1S22 Fig. 9 Collector Dark Current vs. Ambient Temperature 10 - 6 5 Fig. 10-a Relative Collector Current vs. Shield Distance ( 1 ) ( GP1S21) I F = 1.5mA V CE = 5V T a = 25C L Shield Detector V CE= 20V 100 Collector dark current I CEO ( A ) 10 - 7 5 2 10 - 8 5 2 Relative collector current ( % ) 2 50 + 0 ( Detector center ) - 10 - 9 5 2 10 - 10 0 25 50 75 Ambient temperature T a ( C ) 100 0 -2 -1 0 1 Shield distance L ( mm ) 2 3 Fig.10-b Relative Collector Current vs. Shield Distance ( 1 ) ( GP1S22) I F = 5mA V CE = 5V T a = 25C L Shield Detector Fig.11 Relative Collector Current vs. Shield Distance ( 2 ) I F = 1.5mA ( GP1S21 ) I F = 5mA ( GP1S22 ) V CE = 5V T a = 25C ( Detector center ) 3 Shield 0 50 Detector + L 0 -2 -1 0 1 2 Shield distance L ( mm ) Relative collector current ( % ) 50 - + 0 ( Detector center ) 0 -2 -1 0 1 2 3 Shield distance L ( mm ) q Please refer to the chapter " Precautions for Use " . Relative collector current ( % ) 100 100 |
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